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Abstract Defect mitigation of electronic devices is conventionally achieved using thermal annealing. To mobilize the defects, very high temperatures are necessary. Since thermal diffusion is random in nature, the process may take a prolonged period of time. In contrast, we demonstrate a room temperature annealing technique that takes only a few seconds. The fundamental mechanism is defect mobilization by atomic scale mechanical force originating from very high current density but low duty cycle electrical pulses. The high-energy electrons lose their momentum upon collision with the defects, yet the low duty cycle suppresses any heat accumulation to keep the temperature ambient. For a 7 × 10⁵A cm⁻²pulsed current, we report an approximately 26% reduction in specific on-resistance, a 50% increase of the rectification ratio with a lower ideality factor, and reverse leakage current for as-fabricated vertical geometry GaN p–n diodes. We characterize the microscopic defect density of the devices before and after the room temperature processing to explain the improvement in the electrical characteristics. Raman analysis reveals an improvement in the crystallinity of the GaN layer and an approximately 40% relaxation of any post-fabrication residual strain compared to the as-received sample. Cross-sectional transmission electron microscopy (TEM) images and geometric phase analysis results of high-resolution TEM images further confirm the effectiveness of the proposed room temperature annealing technique to mitigate defects in the device. No detrimental effect, such as diffusion and/or segregation of elements, is observed as a result of applying a high-density pulsed current, as confirmed by energy dispersive x-ray spectroscopy mapping. 

NiO/β-(Al x Ga 1− x ) 2 O 3 /Ga 2 O 3 heterojunction lateral geometry rectifiers with diameter 50–100  μm exhibited maximum reverse breakdown voltages >7 kV, showing the advantage of increasing the bandgap using the β-(Al x Ga 1− x ) 2 O 3 alloy. This Si-doped alloy layer was grown by metal organic chemical vapor deposition with an Al composition of ∼21%. On-state resistances were in the range of 50–2180 Ω cm 2 , leading to power figures-of-merit up to 0.72 MW cm −2 . The forward turn-on voltage was in the range of 2.3–2.5 V, with maximum on/off ratios >700 when switching from 5 V forward to reverse biases up to −100 V. Transmission line measurements showed the specific contact resistance was 0.12 Ω cm 2 . The breakdown voltage is among the highest reported for any lateral geometry Ga 2 O 3 -based rectifier. 

This Review highlights basic and transition metal conducting and semiconducting oxides. We discuss their material and electronic properties with an emphasis on the crystal, electronic, and band structures. The goal of this Review is to present a current compilation of material properties and to summarize possible uses and advantages in device applications. We discuss Ga 2 O 3 , Al 2 O 3 , In 2 O 3 , SnO 2 , ZnO, CdO, NiO, CuO, and Sc 2 O 3 . We outline the crystal structure of the oxides, and we present lattice parameters of the stable phases and a discussion of the metastable polymorphs. We highlight electrical properties such as bandgap energy, carrier mobility, effective carrier masses, dielectric constants, and electrical breakdown field. Based on literature availability, we review the temperature dependence of properties such as bandgap energy and carrier mobility among the oxides. Infrared and Raman modes are presented and discussed for each oxide providing insight into the phonon properties. The phonon properties also provide an explanation as to why some of the oxide parameters experience limitations due to phonon scattering such as carrier mobility. Thermal properties of interest include the coefficient of thermal expansion, Debye temperature, thermal diffusivity, specific heat, and thermal conductivity. Anisotropy is evident in the non-cubic oxides, and its impact on bandgap energy, carrier mobility, thermal conductivity, coefficient of thermal expansion, phonon modes, and carrier effective mass is discussed. Alloys, such as AlGaO, InGaO, (Al x In y Ga 1− x− y ) 2 O 3 , ZnGa 2 O 4 , ITO, and ScGaO, were included where relevant as they have the potential to allow for the improvement and alteration of certain properties. This Review provides a fundamental material perspective on the application space of semiconducting oxide-based devices in a variety of electronic and optoelectronic applications. 

β-Ga2O3 is an emerging ultra-wide bandgap semiconductor, holding a tremendous potential for power-switching devices for next-generation high power electronics. The performance of such devices strongly relies on the precise control of electrical properties of β-Ga2O3, which can be achieved by implantation of dopant ions. However, a detailed understanding of the impact of ion implantation on the structure of β-Ga2O3 remains elusive. Here, using aberration-corrected scanning transmission electron microscopy, we investigate the nature of structural damage in ion-implanted β-Ga2O3 and its recovery upon heat treatment with the atomic-scale spatial resolution. We reveal that upon Sn ion implantation, Ga2O3 films undergo a phase transformation from the monoclinic β-phase to the defective cubic spinel γ-phase, which contains high-density antiphase boundaries. Using the planar defect models proposed for the γ-Al2O3, which has the same space group as β-Ga2O3, and atomic-resolution microscopy images, we identify that the observed antiphase boundaries are the {100}1/4 ⟨110⟩ type in cubic structure. We show that post-implantation annealing at 1100 °C under the N2 atmosphere effectively recovers the β-phase; however, nano-sized voids retained within the β-phase structure and a γ-phase surface layer are identified as remanent damage. Our results offer an atomic-scale insight into the structural evolution of β-Ga2O3 under ion implantation and high-temperature annealing, which is key to the optimization of semiconductor processing conditions for relevant device design and the theoretical understanding of defect formation and phase stability.